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    Oxide 摻鎂計量比鈮酸鋰晶體棱鏡MgSLN Prism (太赫茲發生核心器件)【推薦】產地日本

    Oxide 摻鎂計量比鈮酸鋰晶體棱鏡MgSLN Prism (太赫茲發生核心器件)【推薦】產地日本

    MgSLN Prism 9x9x9mm/ 10x10x12.5mm
    -MgSLN Prism -Key Device for THz Generation


    特點:
    • l Easy setup for THz Generation
    • l Wide THz bandwidth(0.2~2.5 THz)
    • l Low Defect Density
    • l High damage threshold
    • l 產地日本Oxide Corporation.


    產品選型
    Standard Type1(Basic)



    Size9x9x9mm
    AR coat@780-820nm and @1025-1065nm



    Strandard Type2(High Power)
    Better performances at high average input power due to the residual power dumped outside of the prism.



    Size10x10x12.5mm
    AR coat@780-820nm and @1025-1065nm


    詳細圖紙歡迎來電索取,瑞研科技0431-81976112


    →MgSLN(摻鎂計量比鈮酸鋰晶體)太赫茲晶體棱鏡-9x9x9mm/ 10x10x12.5mm
    應用:THz 產生器件;接受定制
    點擊查看datasheetMgSLN-Prism-for-THz-Generation.pdf



    Application example references
    Ref. 1: M. Nagai, M. Jewariya, Y. Ichikawa, H. Ohtake, T. Sugiura, Y. Uehara, and K. Tanaka, “Broadband and high power terahertz pulse generation beyond excitation bandwidth limitation via χ(2) cascaded processes in LiNbO3”, OPT. EXPRESS 18, 11543-11549 (2009).
     
    Ref. 2: F. Blanchard, X. Ropagnol, H. Hafez, H. Razavipour, M. Bolduc, R. Morandotti, T. Ozaki, and D. G. Cooke, ” Effect of extreme pump pulse reshaping on intense terahertz emission in lithium niobate at multimilliJoule pump energies”, OPT. LETT. 39, 4333-4336 (2014).

     


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